Silicon photomultipliers (SiPM) are semiconductor single photon sensitive devices with high internal gain. They have promising applications in such areas of science as high-energy physics, cosmophysics and nuclear medicine. However, the possibility of using SiPMs in some areas is limited by radiation tolerance.

Synopsys TCAD software allows developing and simulating technology of production microelectronic devices and their physical characteristics, significantly reducing the time and the cost of prototype manufacturing.

Simulating of manufacturing technology of SiPMs has been made. Based on this simulation, experimental samples were produced and then irradiated with different doses of X-rays with energy E$\approx$12 keV. For the investigation of effects of radiation IV curves of devices were measured before and after irradiation and compared with results obtained from simulation.

Work has been partially supported by Megagrant 2013 program of Russia, agreement N14.A12.31.0006 from 24.06.2013.

NRNU MEPhI

Hamburg University