Feasibility study of APD image sensor using Silicon-On-Insulator technology.
We are developing a new type of X-ray and optical imaging spectroscopy sensor using 0.2um FD-SOI CMOS process. The SOI technology is possible to connect between thick sensor layer of the high-resistivity substrates and circuit layer of low-resistivity substrates. This enables to fabricate monolithic pixel detectors with high-efficiency, high-speed,low-noise, low-power consumption characteristics.
To detect low-level signals, amplification mechanism to increase signal-to-noise ratio is need such as avalanche process. Thus we are studying linear mode avalanche process that operate in the high-field up to 200-500kV/cm.In this study, we will show results of feasibility study of realizing the sensor through HyENEXSS TCAD simulation and also show recent measurement results using SOI test devices.