6-9 July 2015
Moscow, Troitsk
Europe/Moscow timezone
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Contribution poster

Feasibility study of APD image sensor using Silicon-On-Insulator technology.

Speakers

  • Ryutaro HAMASAKI

Primary authors

Co-authors

Content

We are developing a new type of X-ray and optical imaging spectroscopy sensor using 0.2um FD-SOI CMOS process. The SOI technology is possible to connect between thick sensor layer of the high-resistivity substrates and circuit layer of low-resistivity substrates. This enables to fabricate monolithic pixel detectors with high-efficiency, high-speed,low-noise, low-power consumption characteristics.

To detect low-level signals, amplification mechanism to increase signal-to-noise ratio is need such as avalanche process. Thus we are studying linear mode avalanche process that operate in the high-field up to 200-500kV/cm.In this study, we will show results of feasibility study of realizing the sensor through HyENEXSS TCAD simulation and also show recent measurement results using SOI test devices.

Author's Institution

SOKENDAI

Co-author's Institution

KEK,IPNS