6-9 July 2015
Moscow, Troitsk
Europe/Moscow timezone
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Contribution poster

Investigation of avalanche photodiodes after irradiation with neutrons up to $5\times 10^{14}$ n/cm$^2$


  • Mr. Anton KARNEYEU
  • Dr. Yuri MUSIENKO

Primary authors


Results on the radiation hardness of avalanche photodiodes to fast neutrons are presented. APDs from Hamamatsu were irradiated with reactor neutrons up to 1 MeV equivalent fluence of $5\times 10^{14}$ n/cm$^2$ . The effects of this radiation on many parameters such as gain, intrinsic dark current, quantum efficiency, noise and capacitance for these devices are shown and discussed.

Author's Institution

INR RAS (Moscow)