Silicon Photomultipliers (SiPM) are well-known low level light detectors and are potentially devices to replace Photomultiplier Tubes (PMT).

Essential technical key features for the sensors are the timing performance and the optical crosstalk probability. In order to achieve considerable improvements, KETEK has realized process modifications of its established SiPM technology:

The first modification is an optimized signal read-out for the micro pixel network, bringing down the single photon time resolution (SPTR) by a factor of 2.5.

Secondly, there is an improved optical trench isolation which leads to a further suppression of the optical cross talk down to a level of 3% in Geiger saturation regime, which corresponds to 5 V overvoltage (20% relative overvoltage) for the new KETEK device.

The processed devices will be presented and compared to the earlier established technology and an outlook on coming features will be given.

In addition KETEK has successfully transferred the SiPM production into a CMOS foundry. Beside cost advantages compared to a customized production process this also enables the integration of electronics on sensor level. In a close cooperation with MEPHI, KETEK has started R&D on analogue CMOS SiPM with integrated fast electronics.

KETEK

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); KETEK